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AP9980GM Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet


Advanced Power Electronics
AP9980GM
Part Number AP9980GM
Manufacturer Advanced Power Electronics
Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 80V 52mΩ 4.6A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter V...
Features ce 1 200808191 AP9980GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC) Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance R...

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