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AP9980GM-HF Advanced Power Electronics DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet


Advanced Power Electronics
AP9980GM-HF
Part Number AP9980GM-HF
Manufacturer Advanced Power Electronics
Description AP9980 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 D1 G2 D2 The SO-8 package...
Features GS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range 80 +20 4.6 2.9 30 2 3.2 -55 to 150 -55 to 150 V V A A A W mJ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201501123 AP9980GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf C...

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