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KSD560 Inchange Semiconductor Silicon NPN Power Transistor Datasheet

KSD560YTU Darlington Transistors NPN Epitaxial Sil Darl


Inchange Semiconductor
KSD560
Part Number KSD560
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type KSB601 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplif...
Features ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS INCHANGE Semiconductor KSD560 MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;, IB=0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 0.9 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.6 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE=0 1 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 3 mA hFE-1 DC Current Gain IC= 3A ; VCE= 2V 2000 6000 15000 hFE-2 DC Current Gain IC= 5A ; VCE= 2V 500
 hFE-1 Classifications ...

Document Datasheet KSD560 datasheet pdf (190.92KB)
Distributor Distributor
Mouser Electronics
Stock 2381 In Stock
Price
1 units: 1.36 USD
10 units: 1.1 USD
100 units: 0.866 USD
500 units: 0.734 USD
1000 units: 0.573 USD
3000 units: 0.563 USD
5000 units: 0.536 USD
10000 units: 0.511 USD
BuyNow BuyNow BuyNow (Manufacturer a onsemi)




KSD560 Distributor

part
onsemi
KSD560YTU
트랜지스터 - 양극(BJT) - 단일 NPN - 달링턴 100V 5A 1.5W 스루홀 TO-220-3
10000 units: 738.1617 KRW
5000 units: 773.879 KRW
2000 units: 812.5705 KRW
1000 units: 863.166 KRW
500 units: 1059.616 KRW
100 units: 1250.05 KRW
50 units: 1577.5 KRW
1 units: 1962 KRW
Distributor
DigiKey

750 In Stock
BuyNow BuyNow
part
onsemi
KSD560YTU
Darlington Transistors NPN Epitaxial Sil Darl
1 units: 1.36 USD
10 units: 1.1 USD
100 units: 0.866 USD
500 units: 0.734 USD
1000 units: 0.573 USD
3000 units: 0.563 USD
5000 units: 0.536 USD
10000 units: 0.511 USD
Distributor
Mouser Electronics

2381 In Stock
BuyNow BuyNow
part
onsemi
KSD560YTU
Power Bipolar Transistor, 5A, 100V, NPN, TO-220AB, Plastic/Epoxy, 3 Pin
1000 units: 0.5065 USD
500 units: 0.5363 USD
100 units: 0.5601 USD
25 units: 0.584 USD
1 units: 0.5959 USD
Distributor
Rochester Electronics

199 In Stock
BuyNow BuyNow
part
onsemi
KSD560YTU
Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
1000 units: 0.69 USD
250 units: 0.76 USD
50 units: 0.87 USD
10 units: 0.99 USD
1 units: 1.1 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
Fairchild Semiconductor Corporation
KSD560Y
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
No price available
Distributor
ComSIT Asia

1200 In Stock
No Longer Stocked
part
onsemi
KSD560RTSTU
Trans Darlington NPN 100V 5A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: KSD560RTSTU)
180000 units: 0.3472 USD
90000 units: 0.3584 USD
18000 units: 0.3696 USD
9000 units: 0.3808 USD
3600 units: 0.392 USD
1800 units: 0.4032 USD
1786 units: 0.4144 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
onsemi
KSD560YTU
Trans Darlington NPN 100V 5A 3-Pin(3+Tab) TO-220AB Rail (Alt: KSD560YTU)
No price available
Distributor
Avnet Silica

0 In Stock
BuyNow BuyNow
part
onsemi
KSD560YTU
Trans Darlington NPN 100V 5A 3-Pin(3+Tab) TO-220AB Rail (Alt: KSD560YTU)
No price available
Distributor
EBV Elektronik

0 In Stock
BuyNow BuyNow
part
onsemi
KSD560YTU
Stock, ship today
1 units: 0.37 USD
Distributor
Flip Electronics

730 In Stock
No Longer Stocked





KSD560 Similar Datasheet

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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current- Continuous 2.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5000 ELECTRICAL CHARACTERISTI...
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current- Continuous 2.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5004 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherw...
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