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KSD5010 Inchange Semiconductor Silicon NPN Power Transistor Datasheet


Inchange Semiconductor
KSD5010
Part Number KSD5010
Manufacturer Inchange Semiconductor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-E...
Features O Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 0.5A; VCE= 10V IF= 2.5A IC= 2A , IB1= 0.6A ; IB2= -1.2A RL= 100Ω; VCC= 200V MIN TYP. MAX UNIT 8.0 V 1.5 V 10 μA 40 130 mA 8 3 MHz 2.0 V 0.4 μs isc website:www.iscsemi.cn 2 ...

Document Datasheet KSD5010 datasheet pdf (131.63KB)




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