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IS45S32800J ISSI 256Mb SYNCHRONOUS DRAM Datasheet

IS45S32800J-6TLA1 SDRAM 메모리 IC 256Mb(32M x 8) 병렬 166MHz 5.4ns 86-TSOP II


ISSI
IS45S32800J
Part Number IS45S32800J
Manufacturer ISSI
Description IS42S32800J IS45S32800J 8M x 32 256Mb SYNCHRONOUS DRAM DECEMBER 2021 FEATURES • Clock frequency:166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programm...
Features
• Clock frequency:166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst ter...

Document Datasheet IS45S32800J datasheet pdf (810.67KB)
Distributor Distributor
DigiKey
Stock 0 In Stock
Price
216 units: 10173.824 KRW
BuyNow BuyNow BuyNow (Manufacturer a Integrated Silicon Solution Inc)




IS45S32800J Distributor

part
Integrated Silicon Solution Inc
IS45S32800J-6TLA1
SDRAM 메모리 IC 256Mb(32M x 8) 병렬 166MHz 5.4ns 86-TSOP II
216 units: 10173.824 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
Integrated Silicon Solution Inc
IS45S32800J-7TLA1
DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 8Mx32, 143MHz, 86 pin, TSOP II (400 mil) RoHS
1 units: 8.19 USD
10 units: 7.54 USD
25 units: 7.38 USD
108 units: 6.68 USD
216 units: 6.19 USD
540 units: 6.1 USD
1080 units: 6.03 USD
Distributor
Mouser Electronics

83 In Stock
BuyNow BuyNow
part
Integrated Silicon Solution Inc
IS45S32800J-6TLA1
DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 86-Pin TSOP-II - Bulk (Alt: IS45S32800J-6TLA1)
21600 units: 5.45 USD
10800 units: 5.6244 USD
2160 units: 5.7988 USD
1080 units: 6.0168 USD
648 units: 6.1912 USD
432 units: 6.4964 USD
216 units: 6.6708 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
Integrated Silicon Solution Inc
IS45S32800J-7BLA1
DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TF-BGA (Alt: IS45S32800J-7BLA1)
No price available
Distributor
Avnet Silica

0 In Stock
BuyNow BuyNow





IS45S32800J Similar Datasheet

Part Number Description
IS45S32800D
manufacturer
Integrated Silicon Solution
8M x 32 256Mb SYNCHRONOUS DRAM
A0-A11 A0-A8 BA0, BA1 DQ0 to DQ31 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM0-DQM3 Vdd Vss Vddq Vssq NC Write Enable x32 Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection Integrated Silicon Solution, Inc. - www.issi.com Rev.  B 03/27/09 3 IS42S32800D, IS45S32800D www.DataSheet4U.com PIN CONFIGURATION package code: B 90 bALL Tf-bga (Top View) (8.00 mm x 13.00 mm Body, 0.8 mm Ball Pitch) 1 2 3 4 5 6 7 8 9 A B C D E F G H J K L M N P R PIN DESCRIPTIONS A0-A11 ...
IS45S32800G
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256Mb SYNCHRONOUS DRAM
A0-A11 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ31 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQM0-DQM3 Vdd Vss Vddq Vssq NC Write Enable x32 Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection 3 Integrated Silicon Solution, Inc. - www.issi.com Rev. A 07/18/2012 IS42S32800G, IS45S32800G PIN FUNCTIONS Symbol Type A0-A11 Input Pin BA0, BA1 CAS CKE Input Pin Input Pin Input Pin CLK CS DQM0-DQM3 Input Pin Input P...
IS45S32800L
manufacturer
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8M x 32 256Mb SYNCHRONOUS DRAM
IS42S32800L IS45S32800L 8M x 32 256Mb SYNCHRONOUS DRAM ADVANCED INFORMATION JANUARY 2022 FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto Refresh (CBR) • Self Refresh • 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade) • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability •...




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