logo

2SK1007 Inchange Semiconductor N-Channel MOSFET Transistor Datasheet


Inchange Semiconductor
2SK1007
Part Number 2SK1007
Manufacturer Inchange Semiconductor
Description ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dr...
Features R CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2.5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 VSD Forward On-Voltage IS=5A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=10A; RL=25Ω toff Turn-off time 2SK1007 MIN TYP. MAX UNIT 450 V 2.5 3.5 5.0 V 1.1 1.6 Ω ±100 nA 500 uA 1.0 1.5 V 50 80 ns 60 95 ns 50 80 ns 130 200 ns Notice: ISC reserves the ri...

Document Datasheet 2SK1007 datasheet pdf (201.25KB)




2SK1007 Distributor






2SK1007 Similar Datasheet

Part Number Description
2SK1006
manufacturer
Fuji Electric
N-CHANNEL SILICON POWER MOSFET
...
2SK1006-01MR
manufacturer
Fuji Electric
N-CHANNEL SILICON POWER MOSFET
...
2SK1007-01
manufacturer
Fuji Electric
N-CHANNEL SILICON POWER MOSFET
...
2SK1008
manufacturer
INCHANGE
N-Channel MOSFET
·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4.5 A Ptot Total Dissipation@TC=25℃ 60 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W 2S...
2SK1008-01
manufacturer
Fuji Electric
N-CHANNEL SILICON POWER MOSFET
...
2SK1009
manufacturer
Inchange Semiconductor
N-Channel MOSFET Transistor
·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 7 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W 2SK100...
2SK1010
manufacturer
Inchange Semiconductor
N-Channel MOSFET Transistor
·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ...
2SK1010-01
manufacturer
Fuji Electric
N-CHANNEL SILICON POWER MOS-FET
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ...
2SK1011
manufacturer
Inchange Semiconductor
N-Channel MOSFET Transistor
·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W 2SK...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy