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BU807 Inchange Semiconductor Silicon NPN Power Transistor Datasheet

GBU807 Bridge Rectifiers 8A, 1000V, Standard Bridge Rectifier


Inchange Semiconductor
BU807
Part Number BU807
Manufacturer Inchange Semiconductor
Description ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA...
Features ter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)* Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA VBE(sat)* Base-Emitter Saturation Voltage IC= 5A; IB= 50mA ICES Collector Cutoff Current VCE= 330V; VBE= 0 ICEV Collector Cutoff Current VCE= 330V; VBE(off)= 6V IEBO Emitter Cutoff Current VEB= 6V; IC= 0 VECF* C-E Diode Forward Voltage IF= 4A *:Pulse test:pulse width≤300us,duty cycle≤1.5% BU807 MIN TYP. MAX UNIT 150 V 1.5 V 2.4 V 0.1 mA 0.1 mA 3.0 mA 2.0 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without noti...

Document Datasheet BU807 datasheet pdf (196.42KB)
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Mouser Electronics
Stock 663 In Stock
Price
1 units: 1.22 USD
10 units: 1 USD
100 units: 0.779 USD
500 units: 0.66 USD
1000 units: 0.538 USD
2000 units: 0.506 USD
5000 units: 0.482 USD
10000 units: 0.46 USD
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BU807 Distributor

part
STMicroelectronics
BU807
트랜지스터 - 양극(BJT) - 단일 NPN - 달링턴 150V 8A 60W 스루홀 TO-220
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DigiKey

0 In Stock
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Taiwan Semiconductor
GBU807
Bridge Rectifiers 8A, 1000V, Standard Bridge Rectifier
1 units: 1.22 USD
10 units: 1 USD
100 units: 0.779 USD
500 units: 0.66 USD
1000 units: 0.538 USD
2000 units: 0.506 USD
5000 units: 0.482 USD
10000 units: 0.46 USD
Distributor
Mouser Electronics

663 In Stock
BuyNow BuyNow
part
Taiwan Semiconductor
KBU807G
BRIDGE RECTIFIER, 8A, 1000V, KBU, TU
250 units: 12.824 HKD
125 units: 13.024 HKD
500 units: 25.29 HKD
250 units: 25.534 HKD
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RS

120 In Stock
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Philips Semiconductors
BU807
8 AMPERE DARLINGTON POWER TRANSISTOR 60 WATT Power Bipolar Transistor
No price available
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ComSIT Asia

230 In Stock
No Longer Stocked
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ABB Group
BU807
Thomas & Betts
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Sager

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Taiwan Semiconductor
GBU807-K D2
Diode Rectifier Standard Bridge Single 1000V 8A 4-Pin Case GBU Tube - Rail/Tube (Alt: GBU807-K D2)
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Avnet Americas

0 In Stock
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Motorola Semiconductor Products
BU807
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Bristol Electronics

11 In Stock
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part
Taiwan Semiconductor
GBU807
Diode Rectifier Bridge Quad 1000V 8A 4-Pin GBU Tube (Alt: GBU807)
No price available
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EBV Elektronik

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BU807 Similar Datasheet

Part Number Description
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5.0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperatu...
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ON Semiconductort NPN Darlington Power Transistor This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Damper Diode VF is specified. VF = 2.0 V (max) BU806 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS CASE 221A–09 TO–220AB MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Volt...
BU806
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ST Microelectronics
MEDIUM VOLTAGE NPN TRANSISTORS
te cThe devices are silicon Epitaxial Planar NPN le upower transistors in Darlington configuration with dintegrated base-emitter speed-up diode, mounted so roin TO-220 plastic package. b PThey can be used in horizontal output stages of ) - O lete110 oCRT video displays. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM solete Prroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS b PSymbol Parameter O leteVCBO oVCEV bsVCEO O VEBO Collector-base Voltage (IE = 0) Collector-emitter Voltage (VBE = -6V) Collector-emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) BU806 400 400 200 Value 6 BU807 330 330 150 Unit V V V V IC Collector Current 8A ICM Collector Peak Current 15 A IDM Damper Diode P...
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BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BU806 : BU807 VCEO Collector-Emitter Voltage : BU806 : BU807 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 200 150 6 8 15 2 60 150 - 55 ~150 V V V A A A W °C °C 400 330 V V Value Units El...
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Comset Semiconductors
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SEMICONDUCTORS BU806 SILICON DARLINGTON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in a TO-220 plastic package. They are high voltage, high current devices for fast switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEV VCEO VEBO IC ICM IB PT tJ ts Collector-Base Voltage Ratings Value 400 400 200 www.DataSheet.net/ Unit V Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation at Case Temperature Junction Temperature Storage Temperature range Tmb < 25°C V V A A A W °C 6 8 15 2 60 150 -65 to +150 T...
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NTE
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The BU806 is a silicon epitaxial planer NPN power Darlington transistor in a TO−220 type package with an integrated base−emitter speed−up diode designed for use in high voltage, high current, fast switching applications. In particular, the BU806 can be used in horizontal output stages of 110 CRT video displays and is primarily intended for large screen displays. Absolute Maximum Ratings: Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (VBE = −6V), VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (IB = 0), ...
BU806
manufacturer
Central Semiconductor
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The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA ΘJC BU806 400 BU807 330 400 330 200 150 6.0 8.0 15 2.0 60 -65 to +150 70 2.08 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted...
BU806
manufacturer
INCHANGE
Silicon NPN Darlington Power Transistor
·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 8A ICM Collector Current-Peak 15 A IBB Base Current Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2 60 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to ...




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