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2SA1002 INCHANGE Silicon PNP Power Transistor Datasheet


INCHANGE
2SA1002
Part Number 2SA1002
Manufacturer INCHANGE
Description ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE ...
Features IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -0.5A ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -10V 2SA1002 MIN TYP. MAX UNIT -120 V -120 V -6 V -3.0 V -50 μA -50 μA 50 200 40 MHz Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC p...

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·With TO-220 package ·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SA1006 VCBO Collector-base voltage 2SA1006A 2SA1006B 2SA1006 VCEO Collector-emitter voltage 2SA1006A 2SA1006B VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 Open collector Open base Open emitter CONDITIONS VALUE -180 -200 -250 -180 -200 -250 -5 -1.5 -3.0 1.5 W ...
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